Time: 2021-05-08 13:49:50
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Ceramic substrate characteristics:
A. At present, the film process requires a considerable amount of time and a relatively high unit price. Our company combines the exposure and development process with the traditional thick film high-temperature sintering silver process, resulting in a reduction in the number of production line stations, reduced labor costs, and significantly reduced costs for equipment promotion and maintenance. Moreover, due to the reduction in the number of stations, the process flow is accelerated.
B. Due to heat dissipation issues, LEDs often require the use of aluminum nitride substrates, which not only adds cost but also causes metal detachment and other issues due to the attachment of nitrides to materials. Our company utilizes high-temperature sintered silver and our own technology to directly increase and arrange the conductive holes that were originally only arranged around the periphery directly below the chip. Make it a conductive column that directly penetrates the Z-axis direction, ensuring that the heat dissipation characteristics of aluminum oxide are not inferior to those of aluminum nitride substrates. It will not affect the solidification due to the irregular shape of the through-hole.
Specification parameters:
| Support type | Carrier type | molding |
Carrier materials | Cu | AI203 | Silicone/epoxy |
Conduction column | High temperature silver paste with a silver content of 90% -95%/integral copper column | ||
Conduction column diameter | 200-250um | ||
wall structure | silica gel | ||
Wall color | white | black | transparent |
Wall height | 0.25-1mm | ||
Temperature tolerance | MAX250 degrees/3 hours | ||
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